Method for sawing wafers employing multiple indexing techniques for multiple die dimensions

ABSTRACT

A semiconductor wafer saw and method of using the same for dicing semiconductor wafers comprising a wafer saw including variable lateral indexing capabilities and multiple blades. The wafer saw, because of its variable indexing capabilities, can dice wafers having a plurality of differently sized semiconductor devices thereon into their respective discrete components. In addition, the wafer saw with its multiple blades, some of which may be independently laterally or vertically movable relative to other blades, can more efficiently dice silicon wafers into individual semiconductor devices.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 09/567,643,filed May 9, 2000, pending, which is a divisional of application Ser.No. 09/434,147, filed Nov. 4, 1999, now U.S. Pat. No. 6,196,096 B1,issued Mar. 6, 2001, which is a continuation of application Ser. No.09/270,539, filed Mar. 17, 1999, now U.S. Pat. No. 6,155,247, issuedDec. 5, 2000, which is a divisional of application Ser. No. 09/069,561,filed Apr. 29, 1998, now U.S. Pat. No. 6,119,675, issued Sep. 19, 2000,which is a divisional of application Ser. No. 08/747,299, filed Nov. 12,1996, now U.S. Pat. No. 6,250,192 B1, issued Jun. 26, 2001.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to a method and apparatus for sawingsemiconductor substrates such as wafers and, more specifically, to awafer saw and method of using the same employing multiple indexingtechniques and multiple blades for more efficient sawing and for sawingmultiple die sizes and shapes from a single semiconductor wafer.

2. State of the Art

An individual integrated circuit or chip is usually formed from a largerstructure known as a semiconductor wafer, which is usually comprisedprimarily of silicon, although other materials such as gallium arsenideand indium phosphide are also sometimes used. Each semiconductor waferhas a plurality of integrated circuits arranged in rows and columns withthe periphery of each integrated circuit being rectangular. Typically,the wafer is sawn or “diced” into rectangularly shaped discreteintegrated circuits along two mutually perpendicular sets of parallellines or streets lying between each of the rows and columns thereof.Hence, the separated or singulated integrated circuits are commonlyreferred to as dice.

One exemplary wafer saw includes a rotating dicing blade mounted to analuminum hub and attached to a rotating spindle, the spindle beingconnected to a motor. Cutting action of the blade may be effected bydiamond particles bonded thereto, or a traditional “toothed” type blademay be employed. Many rotating wafer saw blade structures are known inthe art. The present invention is applicable to any saw bladeconstruction, so further structures will not be described herein.

Because semiconductor wafers in the art usually contain a plurality ofsubstantially identical integrated circuits arranged in rows andcolumns, two sets of mutually parallel streets extending perpendicularto each other over substantially the entire surface of the wafer areformed between each discrete integrated circuit and are sized to allowpassage of a wafer saw blade between adjacent integrated circuitswithout affecting any of their internal circuitry. A typical wafersawing operation includes attaching the semiconductor wafer to a wafersaw carrier, mechanically, adhesively or otherwise as known in the art,and mounting the wafer saw carrier on the table of the wafer saw. Ablade of the wafer saw is passed through the surface of thesemiconductor wafer, either by moving the blade relative to the wafer,the table of the saw and the wafer relative to a stationary blade, or acombination of both. To dice the wafer, the blade cuts precisely alongeach street, returning back over (but not in contact with) the waferwhile the wafer is laterally indexed to the next cutting location. Onceall cuts associated with mutually parallel streets having oneorientation are complete, either the blade is rotated 90° relative tothe wafer or the wafer is rotated 90°, and cuts are made through streetsin a direction perpendicular to the initial direction of cut. Since eachintegrated circuit on a conventional wafer has the same size andrectangular configuration, each pass of the wafer saw blade isincrementally indexed one unit (a unit being equal to the distance fromone street to the next) in a particular orientation of the wafer. Assuch, the wafer saw and the software controlling it are designed toprovide uniform and precise indexing in fixed increments across thesurface of a wafer.

It may, however, be desirable to design and fabricate a semiconductorwafer having various integrated circuits and other semiconductor devicesthereon, each of which may be of a different size. For example, inradio-frequency ID (RFID) applications, a battery, chip and antennacould be incorporated into the same wafer such that all semiconductordevices of an RFID electronic device are fabricated from a singlesemiconductor wafer. Alternatively, memory dice of different capacities,for example, 4, 16 and 64 megabyte DRAMs, might be fabricated on asingle wafer to maximize the use of silicon “real estate” and reducethiefage or waste of material near the periphery of the almost-circular(but for the flat) wafer. Such semiconductor wafers, in order to bediced however, would require modifications to and/or replacement ofexisting wafer saw hardware and software.

SUMMARY OF THE INVENTION

Accordingly, an apparatus and method for sawing semiconductor wafers,including wafers having a plurality of semiconductor devices ofdifferent sizes and/or shapes therein, is provided. In particular, thepresent invention provides a wafer saw and method of using the samecapable of “multiple indexing” of a wafer saw blade or blades to providethe desired cutting capabilities. As used herein, the term “multipleindexing” contemplates and encompasses both the lateral indexing of asaw blade at multiples of a fixed interval and at varying intervalswhich may not comprise exact multiples of one another. Thus, forconventional wafer configurations containing a number of equally sizedintegrated circuits, the wafer saw and method herein can substantiallysimultaneously saw the wafers with multiple blades and therefore cutmore quickly than single blade wafer saws known in the art. Moreover,for wafers having a plurality of differently-sized or shaped integratedcircuits, the apparatus and method herein provides a multiple indexingcapability to cut non-uniform dice from the same wafer.

In a preferred embodiment, a single-blade, multi-indexing saw isprovided for cutting a wafer containing variously configured integratedcircuits. By providing multiple-indexing capabilities, the wafer saw cansever the wafer into differently sized dice corresponding to theconfiguration of the integrated circuits contained thereon.

In another preferred embodiment, a wafer saw is provided having at leasttwo wafer saw blades spaced a lateral distance from one another andhaving their centers of rotation in substantial parallel mutualalignment. The blades are preferably spaced apart a distance equal tothe distance between adjacent streets on the wafer in question. Withsuch a saw configuration, multiple parallel cuts through the wafer canbe made substantially simultaneously, thus essentially increasing thespeed of cutting a wafer by the number of blades utilized in tandem.Because of the small size of the individual integrated circuits and thecorrespondingly small distances between adjacent streets on the wafer,it may be desirable to space the blades of the wafer saw more than onestreet apart. For example, if the blades of a two-blade saw are spacedtwo streets apart, a first pass of the blades would cut the first andthird laterally separated streets. A second pass of the blades throughthe wafer would cut through the second and fourth streets. The bladeswould then be indexed to cut through the fifth and seventh streets, thensixth and eighth, and so on.

In another preferred embodiment, at least one blade of a multi-blade sawis independently raisable relative to the other blade or blades whenonly a single cut is desired on a particular pass of the carriage. Sucha saw configuration has special utility where the blades are spacedclose enough to cut in parallel on either side of larger integratedcircuits, but use single blade capability for dicing any smallerintegrated circuits. For example, a first pass of the blades of a twoblade saw could cut a first set of adjacent streets defining a column oflarger integrated circuits of the wafer. One blade could then beindependently raised or elevated to effect a subsequent pass of theremaining blade cutting along a street that may be too laterally closeto an adjacent street to allow both blades to cut simultaneously, orthat merely defines a single column of narrower dice. This feature wouldalso permit parallel scribing of the surface of the wafer to mutuallyisolate conductors from, for example, tie bars or other common linksrequired during fabrication, with subsequent passage by a single bladeindexed to track between the scribe lines to completely sever orsingulate the adjacent portions of the wafer.

In yet another preferred embodiment, at least one blade of a multi-bladesaw is independently laterally translatable relative to the other bladeor blades. Thus, in a two-blade saw, for example, the blades could belaterally adjusted between consecutive saw passes of the sawingoperation to accommodate different widths between streets. It should benoted that this preferred embodiment could be combined with otherembodiments herein to provide a wafer saw that has blades that are bothlaterally translatable and independently raisable, or one translatableand one raisable, as desired.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a schematic side view of a first preferred embodiment of awafer saw in accordance with the present invention;

FIG. 2 is a schematic front view of the wafer saw illustrated in FIG. 1;

FIG. 3 is a schematic front view of a second embodiment of a wafer sawin accordance with the present invention;

FIG. 4 is a schematic view of a first silicon semiconductor wafer havinga conventional configuration to be diced with the wafer saw of thepresent invention;

FIG. 5 is a schematic view of a second silicon semiconductor waferhaving variously sized semiconductor devices therein to be diced withthe wafer saw of the present invention;

FIG. 6 is a schematic front view of a third embodiment of a wafer saw inaccordance with the present invention;

FIG. 7 is a schematic view of a third silicon semiconductor wafer havingvariously sized semiconductor devices therein to be diced with the wafersaw of the present invention;

FIG. 8 is a top elevation of a portion of a semiconductor substratebearing conductive traces connected by tie bars; and

FIG. 9 is a top elevation of a portion of a semiconductor substratebearing three different types of components formed thereon.

DETAILED DESCRIPTION OF THE INVENTION

As illustrated in FIGS. 1 and 2, an exemplary wafer saw 10 according tothe invention is comprised of a base 12 to which extension arms 14 and15 suspended by support 16 are attached. A wafer saw blade 18 isattached to a spindle or hub 20 which is rotatably attached to theextension arm 15. The blade 18 may be secured to the hub 20 andextension arm 15 by a threaded nut 21 or other means of attachment knownin the art. The wafer saw 10 also includes a translatable wafer table 22movably attached in both X and Y directions (as indicated by arrows inFIGS. 1 and 2) to the base 12. Alternatively, blade 18 may betranslatable relative to the table 22 to achieve the same relative X-Ymovement of the blade 18 to the table 22. A silicon wafer 24 to bescribed or sawed may be securely mounted to the table 22. As usedherein, the term “saw” includes scribing of a wafer, the resultingscribe line 26 not completely extending through the wafer substrate.Further, the term “wafer” includes traditional full semiconductor wafersof silicon, gallium arsenide, or indium phosphide and othersemiconductor materials, partial wafers, and equivalent structures knownin the art wherein a semiconductor material table or substrate ispresent. For example, so-called silicon-on-insulator or “SOI”structures, wherein silicon is carried on a glass, ceramic or sapphire(“SOS”) base, or other such structures as known in the art, areencompassed by the term “wafer” as used herein. Likewise, “semiconductorsubstrate” may be used to identify wafers and other structures to besingulated into smaller elements.

The saw 10 is capable of lateral multi-indexing of the table 22 or blade18 or, in other words, translatable from side-to-side in FIG. 2 and intoand out of the plane of the page in FIG. 1 various non-uniformdistances. As noted before, such non-uniform distances may be meremultiples of a unit distance, or may comprise unrelated varyingdistances, as desired. Accordingly, a wafer 24 having variously sizedintegrated circuits or other devices or components therein may besectioned or diced into its non-uniformly sized components by themulti-indexing wafer saw 10. In addition, as previously alluded, the saw10 may be used to create scribe lines or cuts that do not extend throughthe wafer 24. The wafer 24 can then subsequently be diced by othermethods known in the art or sawed completely through after the blade 18has been lowered to traverse the wafer to its full depth or thickness.

Before proceeding further, it will be understood and appreciated thatdesign and fabrication of a wafer saw according to the invention havingthe previously-referenced, multi-indexing capabilities, independentlateral blade translation and independent blade raising or elevation arewithin the ability of one of ordinary skill in the art, and thatlikewise the control of such a device to effect the multiple-indexing(whether in units of fixed increments or otherwise), lateral bladetranslation and blade elevation may be effected by suitable programmingof the software-controlled operating system, as known in the art.Accordingly, no further description of hardware components or of acontrol system to effectuate operation of the apparatus of the inventionis necessary.

Referring now to FIG. 3, another illustrated embodiment of a wafer saw30 is shown having two laterally-spaced blades 32 and 34 with theircenters of rotation in substantial parallel alignment transverse to theplanes of the blades. For a conventional, substantially circular siliconsemiconductor wafer 40 (flat omitted), as illustrated in FIG. 4, havinga plurality of similarly configured integrated circuits 42 arranged inevenly spaced rows and columns, the blades can be spaced a distance Dsubstantially equal to the distance between adjacent streets 44 definingthe space between each integrated circuit 42. In addition, if thestreets 44 of wafer 40 are too closely spaced for side-by-side blades 32and 34 to cut along adjacent streets, the blades 32 and 34 can be spaceda distance D substantially equal to the distance between two or morestreets. For example, a first pass of the blades 32 and 34 could cutalong streets 44 a and 44 c and a second pass along streets 44 b and 44d. The blades could then be indexed to cut the next series of streetsand the process repeated for streets 44 e, 44 f, 44 g, and 44 h. If,however, the integrated circuits of a wafer 52 have various sizes, suchas integrated circuits 50 and 51 as illustrated in FIG. 5, at least oneblade 34 is laterally translatable relative to the other blade 32 to cutalong the streets, such as street 56, separating the variously sizedintegrated circuits 50. The blade 34 may be variously translatable by astepper motor 36 having a lead screw 38 or by other devices known in theart, such as high precision gearing in combination with an electricmotor or hydraulics, or other suitable mechanical drive and controlassemblies. For a wafer 52, the integrated circuits, such as integratedcircuits 50 and 51, may be diced by setting the blades 32 and 34 tosimultaneously cut along streets 56 and 57, indexing the blades, settingthem to a wider lateral spread and cutting along streets 58 and 59,indexing the blades while monitoring the same lateral spread orseparation and cutting along streets 60 and 61, and then narrowing theblade spacing and indexing the blades and cutting along streets 62 and63. The wafer 52 could then be rotated 90°, as illustrated by the arrowin FIG. 5, and the blade separation and indexing process repeated forstreets 64 and 65, streets 66 and 67, and streets 68 and 69.

As illustrated in FIG. 6, a wafer saw 70 according to the presentinvention is shown having two blades 72 and 74, one of which isindependently raisable (as indicated by an arrow) relative to the other.As used herein, the term “raisable” includes vertical translation eitherup or down. Such a configuration may be beneficial for situations wherethe distance between adjacent streets is less than the minimum lateralachievable distance between blades 72 and 74, or only a single column ofnarrow dice is to be cut, such as at the edge of a wafer. Thus, whencutting a wafer 80, as better illustrated in FIG. 7, the two blades 72and 74 can make a first pass along streets 82 and 83. One blade 72 canthen be raised, the wafer 80 indexed relative to the unraised blade 74and a second pass performed along street 84 only. Blade 72 can then belowered and the wafer 80 indexed for cutting along streets 85 and 86.The process can be repeated for streets 87 (single-blade pass), 88, and89 (double-blade pass). The elevation mechanism 76 for blade 72 maycomprise a stepper motor, a precision-geared hydraulic or electricmechanism, a pivotable arm which is electrically, hydraulically orpneumatically powered, or other means well known in the art.

Finally, it may be desirable to combine the lateral translation featureof the embodiment of the wafer saw 30 illustrated in FIG. 3 with theindependent blade raising feature of the wafer saw 70 of FIG. 6. Such awafer saw could use a single blade to cut along streets that are tooclosely spaced for dual-blade cutting or in other suitable situations,and use both blades to cut along variously spaced streets where thelateral distance between adjacent streets is sufficient for both bladesto be engaged.

It will be appreciated by those skilled in the art that the embodimentsherein described while illustrating certain embodiments are not intendedto so limit the invention or the scope of the appended claims. Morespecifically, this invention, while being described with reference tosemiconductor wafers containing integrated circuits or othersemiconductor devices, has equal utility to any type of substrate to bescribed or singulated. For example, fabrication of test inserts or chipcarriers formed from a silicon (or other semiconductor) wafer and usedto make temporary or permanent chip-to-wafer, chip-to-chip andchip-to-carrier interconnections and that are cut into individual orgroups of inserts, as described in U.S. Pat. Nos. 5,326,428 and4,937,653, may benefit from the multi-indexing method and apparatusdescribed herein.

For example, illustrated in FIG. 8, a semiconductor substrate 100 mayhave traces 102 formed thereon by electrodeposition techniques requiringconnection of a plurality of traces 102 through a tie bar 104. Atwo-blade saw in accordance with the present invention may be employedto simultaneously scribe substrate 100 along parallel lines 106 and 108flanking a street 110 in order to sever tie bars 104 of adjacentsubstrate segments 112 from their associated traces 102. Following suchseverance, the two columns of adjacent substrate segments 112(corresponding to what would be termed “dice” if integrated circuitswere formed thereon) are completely severed along street 110 after thetwo-blade saw is indexed for alignment of one blade therewith, and theother blade raised out of contact with substrate 100. Subsequently, wheneither the saw or the substrate carrier is rotated 90°, singulation ofthe segments 112 is completed along mutually parallel streets 114. Thus,substrate segments 112 for test or packaging purposes may be fabricatedmore efficiently in the same manner as dice and in the same sizes andshapes.

Further, and as previously noted, RFID modules may be more easilyfabricated when all components of a module are formed on a single waferand retrieved therefrom for placement on a carrier substrate providingmechanical support and electrical interconnection between components.

As shown in FIG. 9, a portion of a substrate 200 is depicted with threeadjacent columns of varying-width segments, the three widths of segmentsillustrating batteries 202, chips 204 and antennas 206 of an RFIDdevice. With all of the RFID components formed on a single substrate200, an RFID module may be assembled by a single pick-and-placeapparatus at a single work station. Thus, complete modules may beassembled without transfer of partially-assembled modules from onestation to the next to add components. Of course, this approach may beemployed to any module assembly wherein all of the components arecapable of being fabricated on a single semiconductor substrate.Fabrication of different components by semiconductor device fabricationtechniques known in the art is within the ability of those of ordinaryskill in the art, and therefore no detailed explanation of thefabrication process leading to the presence of different components on acommon wafer or other substrate is necessary. Masking of semiconductordevice elements not involved in a particular process step is widelypracticed, and so similar isolation of entire components is also easilyeffected to protect the elements of a component until the next processstep with which it is involved.

Further, the present invention has particular applicability to thefabrication of custom or non-standard IC's or other components, whereina capability for rapid and easy die size and shape adjustment on awafer-by-wafer basis is highly beneficial and cost-effective. Thoseskilled in the art will also understand that various combinations of thepreferred embodiments could be made without departing from the spirit ofthe invention. For example, it may be desirable to have at least oneblade of the independently laterally translatable blade configuration beindependently raisable relative to the other blade or blades, or asingle blade may be both translatable and raisable relative to one ormore other blades and to the target wafer. In addition, while forpurposes of simplicity some of the preferred embodiments of the wafersaw are illustrated as having two blades, those skilled in the art willappreciate that the scope of the invention and appended claims isintended to cover wafer saws having more or less than two blades. Thus,while certain representative embodiments and details have been shown forpurposes of illustrating the invention, it will be apparent to thoseskilled in the art that various changes in the invention disclosedherein may be made without departing from the scope of the invention,which is defined in the appended claims.

What is claimed is:
 1. A method for sawing a semiconductor substratewith a two-blade saw, comprising: forming first and second substantiallyparallel, linear cuts substantially concurrently, substantially across,and substantially through at least a first portion of the semiconductorsubstrate using the two blades of the two-blade saw; and forming a thirdlinear cut substantially through said semiconductor substratesubstantially parallel to at least one of said first and second linearcuts at a different time than said forming said first and second linearcuts and across at least a second portion of the semiconductor substrateusing one blade of the two-blade saw, the other blade of the two-bladesaw not contacting the semiconductor substrate during said forming saidthird linear cut.
 2. The method of claim 1, wherein said third linearcut is made subsequent to said first and second linear cuts.
 3. Themethod of claim 1, further including forming fourth and fifthsubstantially parallel, linear cuts substantially concurrently with bothblades of the two-blade saw substantially across at least a thirdportion of said substrate on an opposite side of said third linear cutfrom said first and second linear cuts, said fourth and fifth linearcuts being mutually spaced a lateral distance different than a mutuallateral distance between said second linear cut and said third linearcut.
 4. The method of claim 1, wherein said forming said third linearcut comprises positioning said third linear cut a different distancefrom said second linear cut than a distance between said first linearcut and said second linear cut.
 5. The method of claim 1, wherein saidforming said first and second linear cuts comprises creating scribelines on a surface of the semiconductor substrate.
 6. The method ofclaim 5, wherein said forming said first and second linear cuts furthercomprises cutting substantially through the semiconductor substratealong said scribe lines with subsequent aligned cuts.
 7. The method ofclaim 1, wherein said forming said third linear cut comprises creating ascribe line on a surface of the semiconductor substrate.
 8. The methodof claim 7, wherein said forming said third linear cut further comprisescutting substantially through the semiconductor substrate along saidscribe line with a subsequent cut.
 9. The method of claim 1, furthercomprising repeating a sequence of forming at least one of said first,second, and third linear cuts across at least a portion of a surface ofthe semiconductor substrate.
 10. The method of claim 9, furthercomprising rotating the semiconductor substrate along an axis thereof.11. The method of claim 1, wherein said forming said first and secondlinear cuts comprises: forming at least one of said first and secondlinear cuts along a street between at least two adjacent semiconductordice.
 12. A method for sawing a semiconductor substrate with a two-bladesaw, comprising: forming first and second substantially parallel, linearcuts substantially concurrently at a first portion of a substrate usingthe two blades of the two-blade saw; and forming a third linear cutsubstantially parallel to said first and second linear cuts at a secondportion of said substrate using one blade of the two-blade saw, theother blade of the two-blade saw not contacting said substrate duringsaid forming said third linear cut.
 13. The method of claim 12, whereinsaid third linear cut is not made concurrently with said forming saidfirst and second linear cuts.
 14. The method of claim 12, furtherincluding forming fourth and fifth substantially parallel, linear cutssubstantially concurrently with both blades of the two-blade saw, saidfourth and fifth linear cuts being mutually spaced a lateral distancedifferent than a mutual lateral distance between said second linear cutand said third linear cut.
 15. The method of claim 14, wherein saidforming said fourth and fifth linear cuts is effected at a third portionof said substrate.
 16. The method of claim 14, wherein forming at leastone of said fourth and fifth linear cuts is effected at a locationbetween said first linear cut and at least one of said second and thirdlinear cuts.
 17. The method of claim 12, wherein said forming said thirdlinear cut comprises positioning said third linear cut a differentdistance from said second linear cut than a distance between said firstlinear cut and said second linear cut.
 18. The method of claim 12,wherein said forming said first and second linear cuts comprisescreating scribe lines on a surface of the semiconductor substrate. 19.The method of claim 18, wherein said forming said first and secondlinear cuts further comprises cutting substantially through thesemiconductor substrate along said scribe lines with subsequent alignedcuts.
 20. The method of claim 12, wherein said forming said third linearcut comprises creating a scribe line on a surface of the semiconductorsubstrate.
 21. The method of claim 20, wherein said forming said thirdlinear cut further comprises cutting substantially through thesemiconductor substrate along said scribe line with a subsequent cut.22. The method of claim 12, further comprising repeating a sequence offorming at least one of said first, second, and third linear cuts acrossat least a portion of a surface of the semiconductor substrate.
 23. Themethod of claim 22, further comprising rotating the semiconductorsubstrate along an axis thereof.
 24. The method of claim 12, whereinsaid forming said first and second linear cuts comprises: forming atleast one of said first and second linear cuts along a street between atleast two adjacent semiconductor dice.